SGP02N120 IGBT. Datasheet pdf. Equivalent
Type Designator: SGP02N120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 62 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 6.2 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 20 pF
Package: TO220
SGP02N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGP02N120 Datasheet (PDF)
sgp02n120.pdf
SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
sgp02n120 sgd02n120 sgi02n120g.pdf
SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
sgp02n120 sgd02n120 sgi02n120.pdf
SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
sgp02n60.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
sgp02n60 sgd02n60g.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
sgp02n60 sgd02n60.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
Datasheet: SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , FGA25N120ANTD , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS .
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