SGB15N60HS Todos los transistores

 

SGB15N60HS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGB15N60HS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 138 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 27 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 14 nS

Coesⓘ - Capacitancia de salida, typ: 83 pF

Encapsulados: TO263

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SGB15N60HS datasheet

 ..1. Size:813K  infineon
sgb15n60hs.pdf pdf_icon

SGB15N60HS

SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-263-3-2 (D -PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 ..2. Size:815K  infineon
sgb15n60hs .pdf pdf_icon

SGB15N60HS

SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-263-3-2 (D -PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 6.1. Size:788K  infineon
sgb15n60.pdf pdf_icon

SGB15N60HS

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 6.2. Size:791K  infineon
sgb15n60g.pdf pdf_icon

SGB15N60HS

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

Otros transistores... SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , BT40T60ANF , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 .

 

 

 


 
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