Справочник IGBT. SGB15N60HS

 

SGB15N60HS - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SGB15N60HS
   Тип транзистора: IGBT
   Маркировка: G15N60HS
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 138 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 27 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 14 nS
   Coesⓘ - Выходная емкость, типовая: 83 pF
   Qgⓘ - Общий заряд затвора, typ: 80 nC
   Тип корпуса: TO263

 Аналог (замена) для SGB15N60HS

 

 

SGB15N60HS Datasheet (PDF)

 ..1. Size:813K  infineon
 sgb15n60hs.pdf

SGB15N60HS SGB15N60HS

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 ..2. Size:815K  infineon
 sgb15n60hs .pdf

SGB15N60HS SGB15N60HS

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 6.1. Size:788K  infineon
 sgb15n60.pdf

SGB15N60HS SGB15N60HS

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 6.2. Size:791K  infineon
 sgb15n60g.pdf

SGB15N60HS SGB15N60HS

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 8.1. Size:831K  infineon
 sgb15n120.pdf

SGB15N60HS SGB15N60HS

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f

 8.2. Size:836K  infineon
 sgb15n120 .pdf

SGB15N60HS SGB15N60HS

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f

Другие IGBT... SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , IHW20N120R3 , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 .

 

 
Back to Top