SGB15N60HS Даташит. Аналоги. Параметры и характеристики.
Наименование: SGB15N60HS
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 138 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 27 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 14 nS
Coesⓘ - Выходная емкость, типовая: 83 pF
Тип корпуса: TO263
- подбор IGBT транзистора по параметрам
SGB15N60HS Datasheet (PDF)
sgb15n60hs.pdf

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
sgb15n60hs .pdf

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
sgb15n60.pdf

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
sgb15n60g.pdf

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
Другие IGBT... SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , RJP63F3DPP-M0 , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 .
History: IRG4PC30U | OST75N65HSXF | SSG55N60M | CPV364M4KPBF | OST80N65HMF | MMG50A120B7HN
History: IRG4PC30U | OST75N65HSXF | SSG55N60M | CPV364M4KPBF | OST80N65HMF | MMG50A120B7HN



Список транзисторов
Обновления
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