IGB01N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGB01N120H2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 28 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 6.3 nS
Coesⓘ - Capacitancia de salida, typ: 9.8 pF
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IGB01N120H2 IGBT
IGB01N120H2 Datasheet (PDF)
igb01n120h2.pdf
IGB01N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Quali
igb01n120h2 rev2 4g.pdf
IGB01N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Quali
Otros transistores... SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IKW75N60T , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 .
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