IGB01N120H2 Todos los transistores

 

IGB01N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGB01N120H2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 28 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 6.3 nS
   Coesⓘ - Capacitancia de salida, typ: 9.8 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IGB01N120H2 Datasheet (PDF)

 ..1. Size:1175K  infineon
 igb01n120h2.pdf pdf_icon

IGB01N120H2

IGB01N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Quali

 ..2. Size:1180K  infineon
 igb01n120h2 rev2 4g.pdf pdf_icon

IGB01N120H2

IGB01N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Quali

Otros transistores... SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IKW75N60T , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 .

History: SGT25U120FD1P7 | SSG55N60M | OST80N65HMF | MMG50A120B7HN | OST75N65HSXF | CPV364M4KPBF | IRG4PC30U

 

 
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