IGP01N120H2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP01N120H2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 28 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 6.3 nS
Coesⓘ - Capacitancia de salida, typ: 9.8 pF
Encapsulados: TO220
Búsqueda de reemplazo de IGP01N120H2 IGBT
- Selección ⓘ de transistores por parámetros
IGP01N120H2 datasheet
igp01n120h2 igd01n120h2 rev2 4g.pdf
IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d
igp01n120h2.pdf
IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d
igp01n120h2 igd01n120h2.pdf
IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d
Otros transistores... SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IRGP4063D , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 .
History: SGP15N60 | SG23N06DT
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc627 | 2sc680 | 2sd234 | 2sc9014 | a970 transistor | 2sb560 | tip31c transistor equivalent | 2sc1815 datasheet