IGP01N120H2 Todos los transistores

 

IGP01N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGP01N120H2
   Tipo de transistor: IGBT
   Código de marcado: G01H1202
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 28 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 3.9 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 6.3 nS
   Coesⓘ - Capacitancia de salida, typ: 9.8 pF
   Qgⓘ - Carga total de la puerta, typ: 8.6 nC
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IGP01N120H2 Datasheet (PDF)

 ..1. Size:971K  infineon
igp01n120h2 igd01n120h2 rev2 4g.pdf pdf_icon

IGP01N120H2

IGP01N120H2 IGD01N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d

 ..2. Size:965K  infineon
igp01n120h2.pdf pdf_icon

IGP01N120H2

IGP01N120H2 IGD01N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d

 ..3. Size:967K  infineon
igp01n120h2 igd01n120h2.pdf pdf_icon

IGP01N120H2

IGP01N120H2 IGD01N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d

Otros transistores... SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IRGP4086 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 .

History: HGTG7N60A4 | IXSK80N60B

 

 
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History: HGTG7N60A4 | IXSK80N60B

IGP01N120H2
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