IGP01N120H2 Datasheet and Replacement
Type Designator: IGP01N120H2
Type: IGBT
Marking Code: G01H1202
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 28 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 3.2 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.9 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 6.3 nS
Coesⓘ - Output Capacitance, typ: 9.8 pF
Qg ⓘ - Total Gate Charge, typ: 8.6 nC
Package: TO220
IGP01N120H2 substitution
IGP01N120H2 Datasheet (PDF)
igp01n120h2 igd01n120h2 rev2 4g.pdf
IGP01N120H2 IGD01N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d
igp01n120h2.pdf
IGP01N120H2 IGD01N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d
igp01n120h2 igd01n120h2.pdf
IGP01N120H2 IGD01N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter d
Datasheet: SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , RJH3047 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 .
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