IGB20N60H3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGB20N60H3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 170 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Encapsulados: TO263
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IGB20N60H3 datasheet
igb20n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGB20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G
igb20n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGB20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio
igb20n65s5.pdf
IGB20N65S5 High speed switching series fifth generation TRENCHSTOPTM 5 high speed soft switching IGBT Features and Benefits C High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal current CEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q E G Maxim
Otros transistores... IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , CRG60T60AK3HD , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 .
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