IGB20N60H3 Specs and Replacement
Type Designator: IGB20N60H3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO263
IGB20N60H3 Substitution - IGBT ⓘ Cross-Reference Search
IGB20N60H3 datasheet
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IGBT High speed IGBT in Trench and Fieldstop technology IGB20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G... See More ⇒
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IGBT High speed IGBT in Trench and Fieldstop technology IGB20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio... See More ⇒
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Specs: IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , CRG60T60AK3HD , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 .
Keywords - IGB20N60H3 transistor spec
IGB20N60H3 cross reference
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