IGW60T120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW60T120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 44 nS
Coesⓘ - Capacitancia de salida, typ: 180 pF
Encapsulados: TO247
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IGW60T120 datasheet
igw60t120.pdf
IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Best in class TO247 Short circuit withstand time 10 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distribution - high ruggedness, temperatu
igw60t120 rev2 4g.pdf
IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Best in class TO247 Short circuit withstand time 10 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distribution - high ruggedness, temperatu
igw60n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW60N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW60N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI G maximum ju
Otros transistores... IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , CRG40T60AK3HD , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T .
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