IGW60T120 IGBT. Datasheet pdf. Equivalent
Type Designator: IGW60T120
Type: IGBT
Marking Code: G60T120
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Qgⓘ - Total Gate Charge, typ: 280 nC
Package: TO247
IGW60T120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGW60T120 Datasheet (PDF)
igw60t120.pdf
IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Best in class TO247 Short circuit withstand time 10s G Designed for :E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperatu
igw60t120 rev2 4g.pdf
IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Best in class TO247 Short circuit withstand time 10s G Designed for :E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperatu
igw60n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW60N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW60N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI G maximum ju
Datasheet: IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , GT30J122 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T .
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