IGP10N60T Todos los transistores

 

IGP10N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGP10N60T

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 110 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 8 nS

Coesⓘ - Capacitancia de salida, typ: 40 pF

Encapsulados: TO220

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IGP10N60T datasheet

 ..1. Size:439K  infineon
 igp10n60t.pdf pdf_icon

IGP10N60T

IGP10N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features Very low VCE(sat) 1.5V (typ.) C Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for - Variable Speed Drive for washing machines and air conditioners G - induction cooking E - Uninterrupted Power Supply TRENCHS

 0.1. Size:352K  infineon
 igp10n60trev2 3g.pdf pdf_icon

IGP10N60T

IGP10N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C C Short circuit withstand time 5 s Designed for - Variable Speed Drive for washing machines and air G conditioners E - induction cooking - Uninterrupted Power Supply TrenchStop and Fie

Otros transistores... SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , GT30F133 , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D .

History: IGB10N60T

 

 

 


 
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