IGP10N60T Todos los transistores

 

IGP10N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGP10N60T
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 110 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 8 nS
   Coesⓘ - Capacitancia de salida, typ: 40 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IGP10N60T Datasheet (PDF)

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 igp10n60t.pdf pdf_icon

IGP10N60T

IGP10N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) C Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air conditioners G - induction cooking E - Uninterrupted Power Supply TRENCHS

 0.1. Size:352K  infineon
 igp10n60trev2 3g.pdf pdf_icon

IGP10N60T

IGP10N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air Gconditioners E - induction cooking - Uninterrupted Power Supply TrenchStop and Fie

Otros transistores... SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , STGB10NB37LZ , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D .

History: IGP50N60T | DIM1600ECM17-A

 

 
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