IGP10N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP10N60T
Tipo de transistor: IGBT
Código de marcado: G10T60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 110 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 8 nS
Coesⓘ - Capacitancia de salida, typ: 40 pF
Qgⓘ - Carga total de la puerta, typ: 62 nC
Paquete / Cubierta: TO220
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IGP10N60T Datasheet (PDF)
igp10n60t.pdf
IGP10N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) C Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air conditioners G - induction cooking E - Uninterrupted Power Supply TRENCHS
igp10n60trev2 3g.pdf
IGP10N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air Gconditioners E - induction cooking - Uninterrupted Power Supply TrenchStop and Fie
Otros transistores... SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , CRG75T60AK3HD , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2