IGP50N60T Todos los transistores

 

IGP50N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGP50N60T

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 333 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 29 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO220

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IGP50N60T datasheet

 ..1. Size:443K  infineon
 igp50n60t.pdf pdf_icon

IGP50N60T

IGP50N60T TRENCHSTOP Series Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Designed for - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers

 ..2. Size:448K  infineon
 igp50n60t igw50n60t rev2 6g.pdf pdf_icon

IGP50N60T

IGP50N60T TrenchStop Series IGW50N60T Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers P

Otros transistores... BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , TGAN20N135FD , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D , AUIRGP35B60PD , AUIRGP35B60PD-E .

 

 

 


 
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