All IGBT. IGP50N60T Datasheet

 

IGP50N60T IGBT. Datasheet pdf. Equivalent


   Type Designator: IGP50N60T
   Type: IGBT
   Marking Code: G50T60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 333 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO220

 IGP50N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGP50N60T Datasheet (PDF)

 ..1. Size:443K  infineon
igp50n60t.pdf

IGP50N60T
IGP50N60T

IGP50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :

 ..2. Size:448K  infineon
igp50n60t igw50n60t rev2 6g.pdf

IGP50N60T
IGP50N60T

IGP50N60T TrenchStop Series IGW50N60TLow Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : P

Datasheet: BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , NCE80TD65BT , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D , AUIRGP35B60PD , AUIRGP35B60PD-E .

 

 
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