AUIRG4BC30S-SL Todos los transistores

 

AUIRG4BC30S-SL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRG4BC30S-SL
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Coesⓘ - Capacitancia de salida, typ: 72 pF
   Paquete / Cubierta: TO262
     - Selección de transistores por parámetros

 

AUIRG4BC30S-SL Datasheet (PDF)

 ..1. Size:301K  international rectifier
 auirg4bc30s-s auirg4bc30s-sl.pdf pdf_icon

AUIRG4BC30S-SL

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 1.1. Size:301K  international rectifier
 auirg4bc30s-s.pdf pdf_icon

AUIRG4BC30S-SL

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 4.1. Size:324K  international rectifier
 auirg4bc30u-s.pdf pdf_icon

AUIRG4BC30S-SL

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 8.1. Size:398K  international rectifier
 auirg4pc40s-e.pdf pdf_icon

AUIRG4BC30S-SL

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

MOSTRAR MÁS

Otros transistores... IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , GT30F132 , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D , AUIRGP35B60PD , AUIRGP35B60PD-E , AUIRGP4062D , AUIRGP4063D .

History: SKM200GAL123DKLD110 | GT20G101 | TGAN20N150FD

 

 
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