All IGBT. AUIRG4BC30S-SL Datasheet

 

AUIRG4BC30S-SL IGBT. Datasheet pdf. Equivalent


   Type Designator: AUIRG4BC30S-SL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 34 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 72 pF
   Qgⓘ - Total Gate Charge, typ: 50 nC
   Package: TO262

 AUIRG4BC30S-SL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AUIRG4BC30S-SL Datasheet (PDF)

 ..1. Size:301K  infineon
auirg4bc30s-s auirg4bc30s-sl.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 1.1. Size:301K  international rectifier
auirg4bc30s-s.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 4.1. Size:324K  international rectifier
auirg4bc30u-s.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 8.1. Size:408K  international rectifier
auirg4pc40s-e.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 8.2. Size:295K  international rectifier
auirg4ph50s.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 8.3. Size:398K  infineon
auirg4pc40s-e.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 8.4. Size:280K  infineon
auirg4ph50s.pdf

AUIRG4BC30S-SL
AUIRG4BC30S-SL

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

Datasheet: IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , MBQ50T65FESC , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D , AUIRGP35B60PD , AUIRGP35B60PD-E , AUIRGP4062D , AUIRGP4063D .

 

 
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