GT40T301 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit mm FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.25 s (typ.) (IC = 40 A) FRD trr = 0.7 s (typ.) (di/dt = -20 A/ s) Low saturation voltage VCE (sat) = 3.7 V (typ.) (IC = 40

GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Unit mm Voltage Resonance Inverter Switching Application Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.24 s (typ.) (IC = 40 A) FRD trr = 0.7 s (typ.) (di/dt = -20 A/ s) Low saturation vo

RGT40TS65D 650V 20A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 20A VCE(sat) (Typ.) 1.65V PD 144W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i

SGT40T120SDB4P7 40A 1200V C 2 SGT40T120SDB4P7 1 Trench Field Stop IV G UPS SMPS 3 E