GT40T301 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT40T301
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 400 nS
Paquete / Cubierta: TO264
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GT40T301 Datasheet (PDF)
gt40t301.pdf
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40
gt40t321.pdf
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sgt40t120sdb4p7.pdf
SGT40T120SDB4P7 40A1200V C2SGT40T120SDB4P7 1Trench Field Stop IVG UPSSMPS 3E
Otros transistores... GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT30G124 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 .
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