GT40T301 Datasheet and Replacement

GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40

GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Unit: mmVoltage Resonance Inverter Switching Application Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT: tf = 0.24 s (typ.) (IC = 40 A) FRD: trr = 0.7 s (typ.) (di/dt = -20 A/ s) Low saturation vo

RGT40TS65D 650V 20A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)20AVCE(sat) (Typ.)1.65VPD144W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Built i

SGT40T120SDB4P7 40A1200V C2SGT40T120SDB4P7 1Trench Field Stop IVG UPSSMPS 3E