GT40T301 IGBT. Datasheet pdf. Equivalent
Type Designator: GT40T301
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 400 nS
Package: TO264
GT40T301 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT40T301 Datasheet (PDF)
gt40t301.pdf
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40
gt40t321.pdf
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rgt40ts65d.pdf
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sgt40t120sdb4p7.pdf
SGT40T120SDB4P7 40A1200V C2SGT40T120SDB4P7 1Trench Field Stop IVG UPSSMPS 3E
Datasheet: GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT30G124 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 .
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