AUIRGS4062D Todos los transistores

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AUIRGS4062D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRGS4062D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.95V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 48A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: D2Pak

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AUIRGS4062D Datasheet (PDF)

1.1. auirgs4062d1.pdf Size:415K _igbt_a

AUIRGS4062D
AUIRGS4062D

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

4.1. auirgsl4062d1.pdf Size:415K _igbt_a

AUIRGS4062D
AUIRGS4062D

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

4.2. auirgs30b60k.pdf Size:305K _igbt_a

AUIRGS4062D
AUIRGS4062D

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100°C • 10µs Short Circuit Capability at TJ=175°C • Square RBSOA G tsc > 10µs, TJ=150°C • Positive VCE(on) Temperature Coefficient E • Maximum Junction Temperature rated at 175°C VCE(on) typ.

4.3. auirgsl30b60k.pdf Size:305K _igbt_a

AUIRGS4062D
AUIRGS4062D

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100°C • 10µs Short Circuit Capability at TJ=175°C • Square RBSOA G tsc > 10µs, TJ=150°C • Positive VCE(on) Temperature Coefficient E • Maximum Junction Temperature rated at 175°C VCE(on) typ.

Otros transistores... AUIRGP4063D , AUIRGP4066D1 , AUIRGP50B60PD1 , AUIRGPS4067D1 , AUIRGR4045D , AUIRGS14C40L , AUIRGS30B60K , AUIRGS4056D , IRGB4062D , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S .

 


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Introduzca al menos 1 números o letras