SIW75N65G2H2A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIW75N65G2H2A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 47 nS
Coesⓘ - Capacitancia de salida, typ: 259 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SIW75N65G2H2A Datasheet (PDF)
siw75n65g2h2a.pdf

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2H2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2H2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)
siw75n65g2l2a.pdf

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2L2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2L2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)
Otros transistores... AUIRGP4063D , AUIRGP4066D1 , AUIRGP50B60PD1 , AUIRGPS4067D1 , AUIRGR4045D , SIW50N65G2H2G , AUIRGS30B60K , SIW50N65G2L2G , MBQ40T65FDSC , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S .
History: SGTP50V65FDB1P7 | CM150RL-24NF | APT20GT60KR | SKM150GAL12V | NGTB03N60R2DT4G | ISL9V3040S3S | MMG40S120B6UC
History: SGTP50V65FDB1P7 | CM150RL-24NF | APT20GT60KR | SKM150GAL12V | NGTB03N60R2DT4G | ISL9V3040S3S | MMG40S120B6UC



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