All IGBT. SIW75N65G2H2A Datasheet

 

SIW75N65G2H2A Datasheet and Replacement


   Type Designator: SIW75N65G2H2A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 259 pF
   Package: TO247
      - IGBT Cross-Reference

 

SIW75N65G2H2A Datasheet (PDF)

 ..1. Size:701K  cn super semi
 siw75n65g2h2a.pdf pdf_icon

SIW75N65G2H2A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2H2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2H2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

 4.1. Size:700K  cn super semi
 siw75n65g2l2a.pdf pdf_icon

SIW75N65G2H2A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2L2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2L2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

Datasheet: AUIRGP4063D , AUIRGP4066D1 , AUIRGP50B60PD1 , AUIRGPS4067D1 , AUIRGR4045D , SIW50N65G2H2G , AUIRGS30B60K , SIW50N65G2L2G , MBQ40T65FDSC , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S .

History: MMG75S170B6TC | APTGF15H120T3 | 2MBI200NB-120 | IRGB4059DPBF | IXBP5N160G | APT20GF120BRDQ1G | FD400R33KF2C

Keywords - SIW75N65G2H2A transistor datasheet

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