IRG4BC15MD Todos los transistores

 

IRG4BC15MD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4BC15MD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 49 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.88 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 38 nS
   Coesⓘ - Capacitancia de salida, typ: 35 pF
   Qgⓘ - Carga total de la puerta, typ: 46 nC
   Paquete / Cubierta: TO220AB

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IRG4BC15MD Datasheet (PDF)

 ..1. Size:223K  international rectifier
irg4bc15md.pdf

IRG4BC15MD
IRG4BC15MD

PD- 94151AIRG4BC15MDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS = 15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88VG Indus

 6.1. Size:214K  international rectifier
irg4bc15ud-s.pdf

IRG4BC15MD
IRG4BC15MD

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

 6.2. Size:214K  international rectifier
irg4bc15ud-l.pdf

IRG4BC15MD
IRG4BC15MD

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

 6.3. Size:222K  international rectifier
irg4bc15ud.pdf

IRG4BC15MD
IRG4BC15MD

PD - 94082AIRG4BC15UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard TO-220AB package@VGE = 15V, IC = 7.8AEn-channe

Otros transistores... SIW50N65G2H2G , AUIRGS30B60K , SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , FGPF4533 , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 .

 

 
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