IRG4BC15MD PDF and Equivalents Search

 

IRG4BC15MD Specs and Replacement

Type Designator: IRG4BC15MD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 49 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 14 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.88 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 35 pF

Package: TO220AB

 IRG4BC15MD Substitution

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IRG4BC15MD datasheet

 ..1. Size:223K  international rectifier
 irg4bc15md.pdf pdf_icon

IRG4BC15MD

PD- 94151A IRG4BC15MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS = 15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88V G Indus... See More ⇒

 6.1. Size:214K  international rectifier
 irg4bc15ud-s.pdf pdf_icon

IRG4BC15MD

PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,... See More ⇒

 6.2. Size:214K  international rectifier
 irg4bc15ud-l.pdf pdf_icon

IRG4BC15MD

PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,... See More ⇒

 6.3. Size:222K  international rectifier
 irg4bc15ud.pdf pdf_icon

IRG4BC15MD

PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard TO-220AB package @VGE = 15V, IC = 7.8A E n-channe... See More ⇒

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Specs: SIW50N65G2H2G , AUIRGS30B60K , SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , XNF15N60T , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 .

History: IQG1B456N120B4

Keywords - IRG4BC15MD transistor spec

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