IRG4BC15UD-L IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC15UD-L
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 49 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.02 V @25℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 37 pF
Encapsulados: TO262
Búsqueda de reemplazo de IRG4BC15UD-L IGBT
- Selección ⓘ de transistores por parámetros
IRG4BC15UD-L datasheet
irg4bc15ud-l.pdf
PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,
irg4bc15ud-s.pdf
PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,
irg4bc15ud.pdf
PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard TO-220AB package @VGE = 15V, IC = 7.8A E n-channe
irg4bc15md.pdf
PD- 94151A IRG4BC15MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS = 15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88V G Indus
Otros transistores... SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4PC40W , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S .
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