All IGBT. IRG4BC15UD-L Datasheet

 

IRG4BC15UD-L Datasheet and Replacement


   Type Designator: IRG4BC15UD-L
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 49 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.02 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 37 pF
   Package: TO262
      - IGBT Cross-Reference

 

IRG4BC15UD-L Datasheet (PDF)

 ..1. Size:214K  international rectifier
 irg4bc15ud-l.pdf pdf_icon

IRG4BC15UD-L

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

 3.1. Size:214K  international rectifier
 irg4bc15ud-s.pdf pdf_icon

IRG4BC15UD-L

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

 4.1. Size:222K  international rectifier
 irg4bc15ud.pdf pdf_icon

IRG4BC15UD-L

PD - 94082AIRG4BC15UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard TO-220AB package@VGE = 15V, IC = 7.8AEn-channe

 6.1. Size:223K  international rectifier
 irg4bc15md.pdf pdf_icon

IRG4BC15UD-L

PD- 94151AIRG4BC15MDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS = 15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88VG Indus

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Datasheet: SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , GT60N321 , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S .

History: IXGH30N60C3 | 7MBP100VDA060-50 | APT30GN60SG | DF1400R12IP4D | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - IRG4BC15UD-L transistor datasheet

 IRG4BC15UD-L cross reference
 IRG4BC15UD-L equivalent finder
 IRG4BC15UD-L lookup
 IRG4BC15UD-L substitution
 IRG4BC15UD-L replacement

 

 
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