IRG4BC30U-S Todos los transistores

 

IRG4BC30U-S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4BC30U-S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 9.6 nS
   Coesⓘ - Capacitancia de salida, typ: 73 pF
   Qgⓘ - Carga total de la puerta, typ: 50 nC
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

IRG4BC30U-S Datasheet (PDF)

 ..1. Size:213K  international rectifier
 irg4bc30u-s.pdf pdf_icon

IRG4BC30U-S

PD - 91803IRG4BC30U-SUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 12AE Indust

 0.1. Size:324K  international rectifier
 auirg4bc30u-s.pdf pdf_icon

IRG4BC30U-S

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 5.1. Size:173K  international rectifier
 irg4bc30u.pdf pdf_icon

IRG4BC30U-S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation

 5.2. Size:237K  international rectifier
 irg4bc30ud.pdf pdf_icon

IRG4BC30U-S

PD 91453BIRG4BC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

MOSTRAR MÁS

Otros transistores... IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , IKW40N65WR5 , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E .

History: IXGN400N60B3 | 1MBI2400U4D-170 | BLQG50T65FDLA-W | BLQG50T65FDLA-K | MPBW50N65ED | HGT1S2N120BNS | 1MBI300HH-120L-50

 

 
Back to Top

 


 
.