IRG4BC30U-S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC30U-S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 9.6 nS
Coesⓘ - Capacitancia de salida, typ: 73 pF
Encapsulados: D2PAK
Búsqueda de reemplazo de IRG4BC30U-S IGBT
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IRG4BC30U-S datasheet
irg4bc30u-s.pdf
PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E Indust
auirg4bc30u-s.pdf
PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant
irg4bc30u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation
irg4bc30ud.pdf
PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an
Otros transistores... IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , IRGP4063 , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E .
History: IQGB150N120GB4 | IQGB228N120I4
History: IQGB150N120GB4 | IQGB228N120I4
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