All IGBT. IRG4BC30U-S Datasheet

 

IRG4BC30U-S IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4BC30U-S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 9.6 nS
   Coesⓘ - Output Capacitance, typ: 73 pF
   Qgⓘ - Total Gate Charge, typ: 50 nC
   Package: D2PAK

 IRG4BC30U-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4BC30U-S Datasheet (PDF)

 ..1. Size:213K  international rectifier
 irg4bc30u-s.pdf

IRG4BC30U-S IRG4BC30U-S

PD - 91803IRG4BC30U-SUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 12AE Indust

 0.1. Size:324K  international rectifier
 auirg4bc30u-s.pdf

IRG4BC30U-S IRG4BC30U-S

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 5.1. Size:173K  international rectifier
 irg4bc30u.pdf

IRG4BC30U-S IRG4BC30U-S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation

 5.2. Size:237K  international rectifier
 irg4bc30ud.pdf

IRG4BC30U-S IRG4BC30U-S

PD 91453BIRG4BC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

 5.3. Size:381K  international rectifier
 irg4bc30udpbf.pdf

IRG4BC30U-S IRG4BC30U-S

PD-94810AIRG4BC30UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.95VG Generation

Datasheet: IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , SGT60U65FD1PT , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E .

 

 
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