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IRG4PC20U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PC20U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.1V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 13A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IRG4PC20U Datasheet (PDF)

1.1. irg4pc20u.pdf Size:693K _igbt_a

IRG4PC20U
IRG4PC20U

PD - 97289 IRG4PC20UPbF UltraFast Speed IGBT PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.85V G • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 6.5A E Generatio

4.1. irg4pc40fd.pdf Size:214K _international_rectifier

IRG4PC20U
IRG4PC20U

PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

4.2. irg4pc50f.pdf Size:146K _international_rectifier

IRG4PC20U
IRG4PC20U

D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 3

4.3. irg4pc30f.pdf Size:145K _international_rectifier

IRG4PC20U
IRG4PC20U

D I I T I T D T I T I T Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

4.4. irg4pc50ud.pdf Size:213K _international_rectifier

IRG4PC20U
IRG4PC20U

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution and highe

4.5. irg4pc50k.pdf Size:115K _international_rectifier

IRG4PC20U
IRG4PC20U

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design provides t

4.6. irg4pc50fd.pdf Size:211K _international_rectifier

IRG4PC20U
IRG4PC20U

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

4.7. irg4pc50u.pdf Size:147K _international_rectifier

IRG4PC20U
IRG4PC20U

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE =

4.8. irg4pc40kd.pdf Size:182K _international_rectifier

IRG4PC20U
IRG4PC20U

PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides tig

4.9. irg4pc40f.pdf Size:145K _international_rectifier

IRG4PC20U
IRG4PC20U

D I I T I T D T I T I T Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

4.10. irg4pc60u.pdf Size:123K _international_rectifier

IRG4PC20U
IRG4PC20U

PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast: Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15V, IC = 40A

4.11. irg4pc60u-p.pdf Size:122K _international_rectifier

IRG4PC20U
IRG4PC20U

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and higher effic

4.12. irg4pc50kd.pdf Size:374K _international_rectifier

IRG4PC20U
IRG4PC20U

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher effic

4.13. irg4pc40u.pdf Size:148K _international_rectifier

IRG4PC20U
IRG4PC20U

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3 @VGE =

4.14. irg4pc30ud.pdf Size:211K _international_rectifier

IRG4PC20U
IRG4PC20U

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and highe

4.15. irg4pc60f.pdf Size:118K _international_rectifier

IRG4PC20U
IRG4PC20U

PD - 94442 IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. Industry standard TO-247AC p

4.16. irg4pc30kd.pdf Size:178K _international_rectifier

IRG4PC20U
IRG4PC20U

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switching speed

4.17. irg4pc50w.pdf Size:157K _international_rectifier

IRG4PC20U
IRG4PC20U

D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A

4.18. irg4pc50s.pdf Size:164K _international_rectifier

IRG4PC20U
IRG4PC20U

D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard TO

4.19. irg4pc60f-p.pdf Size:118K _international_rectifier

IRG4PC20U
IRG4PC20U

PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A E

4.20. irg4pc40w.pdf Size:116K _international_rectifier

IRG4PC20U
IRG4PC20U

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E Low IGBT conduction losses n-channel

4.21. irg4pc60upbf.pdf Size:231K _international_rectifier

IRG4PC20U
IRG4PC20U

PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15

4.22. irg4pc40k.pdf Size:119K _international_rectifier

IRG4PC20U
IRG4PC20U

D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Generation

4.23. irg4pc30k.pdf Size:121K _international_rectifier

IRG4PC20U
IRG4PC20U

D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design provides t

4.24. irg4pc30fd.pdf Size:210K _international_rectifier

IRG4PC20U
IRG4PC20U

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

4.25. irg4pc30s.pdf Size:120K _international_rectifier

IRG4PC20U
IRG4PC20U

D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 Industry standard TO-

4.26. irg4pc40ud.pdf Size:245K _international_rectifier

IRG4PC20U
IRG4PC20U

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V Generation 4 IGBT design provides tighter G parameter distribution and high

4.27. irg4pc30w.pdf Size:123K _international_rectifier

IRG4PC20U
IRG4PC20U

D IRG4PC30W I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E

4.28. irg4pc30u.pdf Size:145K _international_rectifier

IRG4PC20U
IRG4PC20U

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE =

4.29. irg4pc40s.pdf Size:143K _international_rectifier

IRG4PC20U
IRG4PC20U

D I I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 Industry standard TO-2

4.30. irg4pc50s-p.pdf Size:144K _international_rectifier

IRG4PC20U
IRG4PC20U

D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard

4.31. irg4pc40fd.pdf Size:224K _igbt_a

IRG4PC20U
IRG4PC20U

PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V • Generation 4 IGBT design provides tighter G parameter distribution and high

4.32. irg4pc50f.pdf Size:152K _igbt_a

IRG4PC20U
IRG4PC20U

 D I I T I T D T I T I T Features C Features Features Features Features • Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

4.33. irg4pc30f.pdf Size:150K _igbt_a

IRG4PC20U
IRG4PC20U

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE

4.34. irg4pc50ud.pdf Size:219K _igbt_a

IRG4PC20U
IRG4PC20U

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V • Generation 4 IGBT design provides tighter G parameter distribution an

4.35. irg4pc50k.pdf Size:121K _igbt_a

IRG4PC20U
IRG4PC20U

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design

4.36. irg4pc50fd.pdf Size:214K _igbt_a

IRG4PC20U
IRG4PC20U

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V • Generation 4 IGBT design provides tighter G parameter distribution and high

4.37. irg4pc50u.pdf Size:153K _igbt_a

IRG4PC20U
IRG4PC20U

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3

4.38. irg4pc40kd.pdf Size:188K _igbt_a

IRG4PC20U
IRG4PC20U

PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design pro

4.39. irg4pc40f.pdf Size:150K _igbt_a

IRG4PC20U
IRG4PC20U

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE

4.40. irg4pc60u.pdf Size:126K _igbt_a

IRG4PC20U
IRG4PC20U

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. • Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G • Generation 4 IGBT design provides tighter parameter distribution and hig

4.41. irg4pc50kd.pdf Size:31K _igbt_a

IRG4PC20U
IRG4PC20U

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher

4.42. irg4pc40u.pdf Size:153K _igbt_a

IRG4PC20U
IRG4PC20U

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3

4.43. irg4pc30ud.pdf Size:216K _igbt_a

IRG4PC20U
IRG4PC20U

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

4.44. irg4pc60f.pdf Size:221K _igbt_a

IRG4PC20U
IRG4PC20U

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15V, IC = 60A

4.45. irg4pc30kd.pdf Size:184K _igbt_a

IRG4PC20U
IRG4PC20U

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.21V • Combines low conduction losses with high G switchin

4.46. irg4pc50w.pdf Size:159K _igbt_a

IRG4PC20U
IRG4PC20U

 D IRG4PC50W I T D T I T I T C Features Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, I

4.47. irg4pc50s.pdf Size:167K _igbt_a

IRG4PC20U
IRG4PC20U

 D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry st

4.48. auirg4pc40s-e.pdf Size:408K _igbt_a

IRG4PC20U
IRG4PC20U

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G  Standard: Optimized for minimum saturation voltage E and low operating frequencies ( < 1kHz) @ VGE = 15V, IC = 31A n-channel  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry

4.49. irg4pc40w.pdf Size:119K _igbt_a

IRG4PC20U
IRG4PC20U

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E • Low IGBT conduction losses

4.50. irg4pc40k.pdf Size:125K _igbt_a

IRG4PC20U
IRG4PC20U

 D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design provides higher efficiency G than Ge

4.51. irg4pc30k.pdf Size:127K _igbt_a

IRG4PC20U
IRG4PC20U

 D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed • Latest generation design

4.52. irg4pc30fd.pdf Size:216K _igbt_a

IRG4PC20U
IRG4PC20U

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and high

4.53. irg4pc30s.pdf Size:125K _igbt_a

IRG4PC20U
IRG4PC20U

 D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry sta

4.54. irg4pc40ud.pdf Size:238K _igbt_a

IRG4PC20U
IRG4PC20U

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V • Generation 4 IGBT design provides tighter G parameter distribution a

4.55. irg4pc30w.pdf Size:121K _igbt_a

IRG4PC20U
IRG4PC20U

 D IRG4PC30W I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

4.56. irg4pc30u.pdf Size:151K _igbt_a

IRG4PC20U
IRG4PC20U

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3

4.57. irg4pc40s.pdf Size:148K _igbt_a

IRG4PC20U
IRG4PC20U

 D I I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry stan

Otros transistores... IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG7IC28U , IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD .

 


IRG4PC20U
  IRG4PC20U
  IRG4PC20U
 

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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


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