IRG4PC20U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 97289IRG4PC20UPbFUltraFast Speed IGBTPROVISIONALINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.85VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 6.5AE Generatio

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

PD -91587AIRG4PC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switchin

PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15

PD - 94911AIRG4PC40FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesC Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50V parameter distribution and higher efficiency thanG Generation 3

PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an

PD 91464BIRG4PC40FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighterG parameter distribution and high

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A

D . IRG4PC40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Ge

PD 91460BIRG4PC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and high

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

D IRG4PC30S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD -91582BIRG4PC50KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for highVCES = 600Voperating frequencies >5.0 kHz, and Short Circuit Ratedto 10s @125C, VGE = 15VVCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameterGdistribution and higher

PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A

D IRG4PC50S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD -91584AIRG4PC40KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design pro

PD - 91583BIRG4PC50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 1.84VG switching speed Latest generation design

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VGE

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation 3

PD -91656CIRG4PC40WINSULATED GATE BIPOLAR TRANSISTORFeatures C Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 20AE Low IGBT conduction losses

D IRG4PC50S-PStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD 9.1467DIRG4PC40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.72V Generation 4 IGBT design provides tighterG parameter distribution a

PD -94920IRG4PC30FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 17AE Industry stan

PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industr

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

D IRG4PC30KShort Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design

PD - 95327IRG4PC30UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHzin resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation

D IRG4PC30WI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC

PD 91462BIRG4PC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

D IRG4PC50WI T D T I T I T CFeaturesFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.30VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, I

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation