IRG4PC20U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PC20U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 60 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 39 pF
Encapsulados: TO247
Búsqueda de reemplazo de IRG4PC20U IGBT
- Selección ⓘ de transistores por parámetros
IRG4PC20U datasheet
..1. Size:693K international rectifier
irg4pc20u.pdf 
PD - 97289 IRG4PC20UPbF UltraFast Speed IGBT PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.85V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 6.5A E Generatio
8.1. Size:150K international rectifier
irg4pc30f.pdf
D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE
8.2. Size:153K international rectifier
irg4pc50u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3
8.3. Size:184K international rectifier
irg4pc30kd.pdf
PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switchin
8.5. Size:231K international rectifier
irg4pc60upbf.pdf
PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15
8.6. Size:342K international rectifier
irg4pc40fdpbf.pdf
PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C Fast Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V parameter distribution and higher efficiency than G Generation 3
8.7. Size:219K international rectifier
irg4pc50ud.pdf
PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution an
8.8. Size:224K international rectifier
irg4pc40fd.pdf
PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighter G parameter distribution and high
8.9. Size:398K international rectifier
auirg4pc40s-e.pdf
AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G Standard Optimized for minimum saturation voltage E and low operating frequencies (
8.10. Size:214K international rectifier
irg4pc50fd.pdf
PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and high
8.11. Size:221K international rectifier
irg4pc60f.pdf
PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15V, IC = 60A
8.12. Size:125K international rectifier
irg4pc40k.pdf
D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Ge
8.13. Size:216K international rectifier
irg4pc30fd.pdf
PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and high
8.14. Size:148K international rectifier
irg4pc40s.pdf
D I I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
8.15. Size:125K international rectifier
irg4pc30s.pdf
D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
8.16. Size:31K international rectifier
irg4pc50kd.pdf
PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10 s @125 C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher
8.17. Size:118K international rectifier
irg4pc60f-p.pdf
PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V Fast Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A
8.18. Size:167K international rectifier
irg4pc50s.pdf
D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
8.19. Size:188K international rectifier
irg4pc40kd.pdf
PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design pro
8.20. Size:121K international rectifier
irg4pc50k.pdf
PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design
8.21. Size:152K international rectifier
irg4pc50f.pdf
D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,
8.22. Size:126K international rectifier
irg4pc60u.pdf
PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig
8.23. Size:150K international rectifier
irg4pc40f.pdf
D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE
8.24. Size:151K international rectifier
irg4pc30u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3
8.25. Size:153K international rectifier
irg4pc40u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3
8.26. Size:119K international rectifier
irg4pc40w.pdf
PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E Low IGBT conduction losses
8.27. Size:144K international rectifier
irg4pc50s-p.pdf
D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
8.28. Size:238K international rectifier
irg4pc40ud.pdf
PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V Generation 4 IGBT design provides tighter G parameter distribution a
8.29. Size:269K international rectifier
irg4pc30fpbf.pdf
PD -94920 IRG4PC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 17A E Industry stan
8.30. Size:635K international rectifier
irg4pc50upbf.pdf
PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industr
8.31. Size:122K international rectifier
irg4pc60u-p.pdf
PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig
8.32. Size:127K international rectifier
irg4pc30k.pdf
D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design
8.33. Size:385K international rectifier
irg4pc30udpbf.pdf
PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation
8.34. Size:121K international rectifier
irg4pc30w.pdf
D IRG4PC30W I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC
8.35. Size:216K international rectifier
irg4pc30ud.pdf
PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an
8.36. Size:323K international rectifier
irg4pc50f-e.pdf
PD - 96168 IRG4PC50F-EPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standar
8.37. Size:159K international rectifier
irg4pc50w.pdf
D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, I
8.38. Size:310K international rectifier
irg4pc50fpbf.pdf
PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standard
8.39. Size:687K international rectifier
irg4pc50udpbf.pdf
PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V parameter distribution and higher efficiency than G Generation
Otros transistores... IRG4BC30S-S
, IRG4BC30U-S
, IRG4BC40WL
, IRG4BC40WS
, IRG4BH20K-L
, IRG4BH20K-S
, IRG4IBC10UD
, IRG4IBC30S
, FGH40N60SFD
, IRG4PC50F-E
, IRG4PC50SD
, IRG4PC60F
, IRG4PC60U-P
, IRG4PH40UD2-E
, IRG4PH50S-E
, IRG4PSH71U
, IRG4PSH71UD
.
History: IRG4BC15UD-L
