IRG4PC20U PDF and Equivalents Search

 ..1. Size:693K  international rectifier
 irg4pc20u.pdf

PD - 97289 IRG4PC20UPbF UltraFast Speed IGBT PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.85V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 6.5A E Generatio... See More ⇒

 8.1. Size:150K  international rectifier
 irg4pc30f.pdf

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE ... See More ⇒

 8.2. Size:153K  international rectifier
 irg4pc50u.pdf

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3... See More ⇒

 8.3. Size:184K  international rectifier
 irg4pc30kd.pdf

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switchin... See More ⇒

 8.4. Size:1836K  international rectifier
 irg4pc50sdpbf.pdf

... See More ⇒

 8.5. Size:231K  international rectifier
 irg4pc60upbf.pdf

PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15... See More ⇒

 8.6. Size:342K  international rectifier
 irg4pc40fdpbf.pdf

PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C Fast Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V parameter distribution and higher efficiency than G Generation 3 ... See More ⇒

 8.7. Size:219K  international rectifier
 irg4pc50ud.pdf

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒

 8.8. Size:224K  international rectifier
 irg4pc40fd.pdf

PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighter G parameter distribution and high... See More ⇒

 8.9. Size:398K  international rectifier
 auirg4pc40s-e.pdf

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G Standard Optimized for minimum saturation voltage E and low operating frequencies ( ... See More ⇒

 8.10. Size:214K  international rectifier
 irg4pc50fd.pdf

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and high... See More ⇒

 8.11. Size:221K  international rectifier
 irg4pc60f.pdf

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15V, IC = 60A ... See More ⇒

 8.12. Size:125K  international rectifier
 irg4pc40k.pdf

D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Ge... See More ⇒

 8.13. Size:216K  international rectifier
 irg4pc30fd.pdf

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and high... See More ⇒

 8.14. Size:148K  international rectifier
 irg4pc40s.pdf

D I I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( ... See More ⇒

 8.15. Size:125K  international rectifier
 irg4pc30s.pdf

D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( ... See More ⇒

 8.16. Size:31K  international rectifier
 irg4pc50kd.pdf

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10 s @125 C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher ... See More ⇒

 8.17. Size:118K  international rectifier
 irg4pc60f-p.pdf

PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V Fast Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A... See More ⇒

 8.18. Size:167K  international rectifier
 irg4pc50s.pdf

D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( ... See More ⇒

 8.19. Size:188K  international rectifier
 irg4pc40kd.pdf

PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design pro... See More ⇒

 8.20. Size:121K  international rectifier
 irg4pc50k.pdf

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design... See More ⇒

 8.21. Size:152K  international rectifier
 irg4pc50f.pdf

D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,... See More ⇒

 8.22. Size:126K  international rectifier
 irg4pc60u.pdf

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig... See More ⇒

 8.23. Size:150K  international rectifier
 irg4pc40f.pdf

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE ... See More ⇒

 8.24. Size:151K  international rectifier
 irg4pc30u.pdf

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3... See More ⇒

 8.25. Size:153K  international rectifier
 irg4pc40u.pdf

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3... See More ⇒

 8.26. Size:119K  international rectifier
 irg4pc40w.pdf

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E Low IGBT conduction losses... See More ⇒

 8.27. Size:144K  international rectifier
 irg4pc50s-p.pdf

D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( ... See More ⇒

 8.28. Size:238K  international rectifier
 irg4pc40ud.pdf

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V Generation 4 IGBT design provides tighter G parameter distribution a... See More ⇒

 8.29. Size:269K  international rectifier
 irg4pc30fpbf.pdf

PD -94920 IRG4PC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 17A E Industry stan... See More ⇒

 8.30. Size:635K  international rectifier
 irg4pc50upbf.pdf

PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industr... See More ⇒

 8.31. Size:122K  international rectifier
 irg4pc60u-p.pdf

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig... See More ⇒

 8.32. Size:127K  international rectifier
 irg4pc30k.pdf

D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design... See More ⇒

 8.33. Size:385K  international rectifier
 irg4pc30udpbf.pdf

PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation ... See More ⇒

 8.34. Size:121K  international rectifier
 irg4pc30w.pdf

D IRG4PC30W I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC... See More ⇒

 8.35. Size:216K  international rectifier
 irg4pc30ud.pdf

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒

 8.36. Size:323K  international rectifier
 irg4pc50f-e.pdf

PD - 96168 IRG4PC50F-EPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standar... See More ⇒

 8.37. Size:159K  international rectifier
 irg4pc50w.pdf

D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, I... See More ⇒

 8.38. Size:310K  international rectifier
 irg4pc50fpbf.pdf

PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standard ... See More ⇒

 8.39. Size:687K  international rectifier
 irg4pc50udpbf.pdf

PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V parameter distribution and higher efficiency than G Generation... See More ⇒