IRG6I320U Todos los transistores

 

IRG6I320U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG6I320U

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 39 W

|Vce|ⓘ - Tensión máxima colector-emisor: 330 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 61 pF

Encapsulados: TO220F

 Búsqueda de reemplazo de IRG6I320U IGBT

- Selección ⓘ de transistores por parámetros

 

IRG6I320U datasheet

 ..1. Size:253K  international rectifier
irg6i320u.pdf pdf_icon

IRG6I320U

PD - 97351A IRG6I320UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 24A 1.45 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l

 8.1. Size:306K  international rectifier
irg6i330u.pdf pdf_icon

IRG6I320U

PD - 96192A IRG6I330UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 28A 1.30 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 250 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L

 9.1. Size:285K  international rectifier
irg6ic30u.pdf pdf_icon

IRG6I320U

PD - 97386 IRG6IC30UPbF PDP TRENCH IGBT Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 25A 1.50 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 250 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L

Otros transistores... IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , CRG40T60AN3H , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U .

 

 

 


 
↑ Back to Top
.