IRG6IC30U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG6IC30U  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 37 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 85 pF

Encapsulados: TO220F

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IRG6IC30U datasheet

 ..1. Size:285K  international rectifier
 irg6ic30u.pdf pdf_icon

IRG6IC30U

PD - 97386 IRG6IC30UPbF PDP TRENCH IGBT Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 25A 1.50 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 250 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L

 9.1. Size:253K  international rectifier
 irg6i320u.pdf pdf_icon

IRG6IC30U

PD - 97351A IRG6I320UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 24A 1.45 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l

 9.2. Size:306K  international rectifier
 irg6i330u.pdf pdf_icon

IRG6IC30U

PD - 96192A IRG6I330UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 28A 1.30 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 250 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L

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