IRG7IC28U Todos los transistores

 

IRG7IC28U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7IC28U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.95

Corriente del colector DC máxima (Ic): 25

Empaquetado / Estuche: TO220AB

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IRG7IC28U Datasheet (PDF)

0.1. irg7ic28u.pdf Size:282K _international_rectifier

IRG7IC28U
IRG7IC28U

PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

8.1. irg7ic30fd.pdf Size:298K _international_rectifier

IRG7IC28U
IRG7IC28U

IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance

 9.1. irg7ia19u.pdf Size:287K _international_rectifier

IRG7IC28U
IRG7IC28U

PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea

9.2. irg7i313u.pdf Size:203K _international_rectifier

IRG7IC28U
IRG7IC28U

PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

 9.3. irg7i319u.pdf Size:297K _international_rectifier

IRG7IC28U
IRG7IC28U

PD -96273PDP TRENCH IGBTIRG7I319UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25C170 Acircuits in PDP applicationsTJ max150 Cl Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiencyl High repetitive peak current capabilityCl

9.4. irg7ia13u.pdf Size:171K _international_rectifier

IRG7IC28U
IRG7IC28U

PD - 97636AIRG7IA13UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25Ccircuits in PDP applications 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

Otros transistores... IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7R313U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 .

 

 
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