IRG7IC28U
IGBT. Datasheet pdf. Equivalent
Type Designator: IRG7IC28U
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 40
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic|ⓘ - Maximum Collector Current: 25
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.7
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 35
nS
Coesⓘ - Output Capacitance, typ: 75
pF
Qgⓘ -
Total Gate Charge, typ: 70
nC
Package:
TO220F
IRG7IC28U
Datasheet (PDF)
..1. Size:282K international rectifier
irg7ic28u.pdf 
PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl
8.1. Size:298K international rectifier
irg7ic30fd.pdf
IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance
9.1. Size:287K international rectifier
irg7ia19u.pdf
PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea
9.2. Size:203K international rectifier
irg7i313u.pdf
PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
9.3. Size:171K international rectifier
irg7ia13u.pdf
PD - 97636AIRG7IA13UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25Ccircuits in PDP applications 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
9.4. Size:297K international rectifier
irg7i319u.pdf
PD -96273PDP TRENCH IGBTIRG7I319UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25C170 Acircuits in PDP applicationsTJ max150 Cl Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiencyl High repetitive peak current capabilityCl
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, IRG6S320U
, IRG6S330U
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, IRG7I319U
, IRG7IA13U
, IRG7IA19U
, GT30G124
, IRG7P313U
, IRG7PA19U
, IRG7PC28U
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, IRG7PH35UD1
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