IRG7SC12F
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG7SC12F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 69
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.6
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 7
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 20
nS
Coesⓘ - Capacitancia de salida, typ: 30
pF
Qgⓘ - Carga total de la puerta, typ: 34
nC
Paquete / Cubierta:
D2PAK
Búsqueda de reemplazo de IRG7SC12F
- IGBT
IRG7SC12F
Datasheet (PDF)
..1. Size:252K international rectifier
irg7sc12f.pdf 
PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Pac
8.1. Size:213K international rectifier
irg7sc28u.pdf
PD - 97569APDP TRENCH IGBTIRG7SC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl
9.1. Size:244K international rectifier
irg7s319u.pdf
PD - 97155IRG7S319UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.26 Vcircuits in PDP applicationsIRP max @ TC= 25C 170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead
9.2. Size:244K international rectifier
irg7s313u.pdf
PD - 97402AIRG7S313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead
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