IRG7SC12F Datasheet. Specs and Replacement

Type Designator: IRG7SC12F  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 69 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 24 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 30 pF

Package: D2PAK

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IRG7SC12F datasheet

 ..1. Size:252K  international rectifier
 irg7sc12f.pdf pdf_icon

IRG7SC12F

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 C IC = 8A, TC = 100 C 3 S short circuit SOA Square RBSOA G tSC 3 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient E Tight parameter distribution VCE(on) typ. = 1.60V Lead Free Pac... See More ⇒

 8.1. Size:213K  international rectifier
 irg7sc28u.pdf pdf_icon

IRG7SC12F

PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l... See More ⇒

 9.1. Size:244K  international rectifier
 irg7s319u.pdf pdf_icon

IRG7SC12F

PD - 97155 IRG7S319UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.26 V circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead ... See More ⇒

 9.2. Size:244K  international rectifier
 irg7s313u.pdf pdf_icon

IRG7SC12F

PD - 97402A IRG7S313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead... See More ⇒

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Specs: IRG7PH46UD, IRG7PH50U, IRG7PH50U-EP, IRG7PSH50UD, IRG7PSH73K10, IRG7R313U, IRG7S313U, IRG7S319U, CRG75T60AK3HD, IRG7SC28U, IRGB10B60KD, IRGB14C40L, IRGB15B60KD, IRGB20B60PD1, IRGB30B60K, IRGB4045D, IRGB4056D

Keywords - IRG7SC12F transistor spec

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