All IGBT. IRG7SC12F Datasheet

 

IRG7SC12F IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7SC12F

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 69

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic| @25℃, A: 24

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85

Package: D2PAK

IRG7SC12F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7SC12F Datasheet (PDF)

 ..1. Size:252K  international rectifier
 irg7sc12f.pdf

IRG7SC12F IRG7SC12F

PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Pac

 8.1. Size:213K  international rectifier
 irg7sc28u.pdf

IRG7SC12F IRG7SC12F

PD - 97569APDP TRENCH IGBTIRG7SC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

 9.1. Size:244K  international rectifier
 irg7s313u.pdf

IRG7SC12F IRG7SC12F

PD - 97402AIRG7S313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

 9.2. Size:244K  international rectifier
 irg7s319u.pdf

IRG7SC12F IRG7SC12F

PD - 97155IRG7S319UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.26 Vcircuits in PDP applicationsIRP max @ TC= 25C 170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

Datasheet: IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , MBQ40T65FDSC , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D .

 

 
Back to Top