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IRG7SC12F Spec and Replacement


   Type Designator: IRG7SC12F
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Package: D2PAK

 IRG7SC12F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7SC12F specs

 ..1. Size:252K  international rectifier
 irg7sc12f.pdf pdf_icon

IRG7SC12F

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 C IC = 8A, TC = 100 C 3 S short circuit SOA Square RBSOA G tSC 3 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient E Tight parameter distribution VCE(on) typ. = 1.60V Lead Free Pac... See More ⇒

 8.1. Size:213K  international rectifier
 irg7sc28u.pdf pdf_icon

IRG7SC12F

PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l... See More ⇒

 9.1. Size:244K  international rectifier
 irg7s319u.pdf pdf_icon

IRG7SC12F

PD - 97155 IRG7S319UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.26 V circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead ... See More ⇒

 9.2. Size:244K  international rectifier
 irg7s313u.pdf pdf_icon

IRG7SC12F

PD - 97402A IRG7S313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead... See More ⇒

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Specs: IRG7PH46UD , IRG7PH50U , IRG7PH50U-EP , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , CRG15T120BNR3S , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D .

Keywords - IRG7SC12F transistor spec

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