IRGIB10B60KD1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGIB10B60KD1 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 44 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 24 nS
Coesⓘ - Capacitancia de salida, typ: 66 pF
Encapsulados: TO220F
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IRGIB10B60KD1 datasheet
irgib10b60kd1.pdf
PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 10A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie
irgib15b60kd1.pdf
PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici
irgib15b60kd1p.pdf
PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici
Otros transistores... IRGB4B60K, IRGB4B60KD1, IRGB5B120KD, IRGB6B60K, IRGB6B60KD, IRGB8B60K, IRGI4086, IRGI4090, IKW30N60H3, IRGIB15B60KD1, IRGIB6B60KD, IRGIB7B60KD, IRGP20B120UD-E, IRGP20B120U-E, IRGP20B60PD, IRGP30B120KD-E, IRGP30B60KD-E
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