All IGBT. IRGIB10B60KD1 Datasheet

 

IRGIB10B60KD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGIB10B60KD1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 44

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Collector Current |Ic|, A: 16

Package: TO220 FULLPAK

IRGIB10B60KD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGIB10B60KD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGIB10B60KD1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 44

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Collector Current |Ic|, A: 16

Package: TO220 FULLPAK

IRGIB10B60KD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGIB10B60KD1 Datasheet (PDF)

0.1. irgib10b60kd1.pdf Size:384K _international_rectifier

IRGIB10B60KD1
IRGIB10B60KD1

PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

8.1. irgib15b60kd1.pdf Size:282K _international_rectifier

IRGIB10B60KD1
IRGIB10B60KD1

PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 9.1. irgib6b60kd.pdf Size:277K _international_rectifier

IRGIB10B60KD1
IRGIB10B60KD1

PD-94427DIRGIB6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 6.0A, TC=90C Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.G 10s Short Circuit Capability.tsc > 10s, TJ=175C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.E Positive VCE (on) Temperature Coeffici

9.2. irgib7b60kd.pdf Size:439K _international_rectifier

IRGIB10B60KD1
IRGIB10B60KD1

PD - 94620BIRGIB7B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 8.0A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated at 175C.VCE(on) typ. =

Datasheet: IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGB20B60PD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E .

 

 
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