All IGBT. IRGIB10B60KD1 Datasheet

 

IRGIB10B60KD1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGIB10B60KD1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 44 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 66 pF
   Package: TO220F

 IRGIB10B60KD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGIB10B60KD1 Datasheet (PDF)

 ..1. Size:384K  international rectifier
 irgib10b60kd1.pdf

IRGIB10B60KD1 IRGIB10B60KD1

PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

 0.1. Size:392K  infineon
 irgib10b60kd1p.pdf

IRGIB10B60KD1 IRGIB10B60KD1

IRGIB10B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E

 8.1. Size:282K  international rectifier
 irgib15b60kd1.pdf

IRGIB10B60KD1 IRGIB10B60KD1

PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 8.2. Size:382K  infineon
 irgib15b60kd1p.pdf

IRGIB10B60KD1 IRGIB10B60KD1

PD- 94914IRGIB15B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

Datasheet: IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , XNF15N60T , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E .

 

 
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