IRGP30B60KD-E Todos los transistores

 

IRGP30B60KD-E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGP30B60KD-E
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 304 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 160 pF
   Qgⓘ - Carga total de la puerta, typ: 102 nC
   Paquete / Cubierta: TO247
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IRGP30B60KD-E Datasheet (PDF)

 ..1. Size:270K  international rectifier
irgp30b60kd-e.pdf pdf_icon

IRGP30B60KD-E

PD - 94388BIRGP30B60KD-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10s Short Circuit Capability.IC = 30A, TC=100C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.Gtsc > 10s, TJ=150C Positive VCE (on) Temperature Coeffici

 7.1. Size:312K  international rectifier
irgp30b120kd-e.pdf pdf_icon

IRGP30B60KD-E

PD- 93818AIRGP30B120KD-EINSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V Low VCE(on) Non Punch Through (NPT)Technology Low Diode VF (1.76V Typical @ 25A & 25C)VCE(on) typ. = 2.28V 10 s Short Circuit Capability G Square RBSOAVGE = 15V, IC = 25A, 25C Ultrasoft Diode Recovery Ch

 9.1. Size:290K  international rectifier
auirgp35b60pd.pdf pdf_icon

IRGP30B60KD-E

PD - 97675AUTOMOTIVE GRADEAUIRGP35B60PDWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesG Minimal Tail CurrentParameters HEXFRED Ultra Fast Soft-Recovery Co-Pack DiodeRCE(on)

 9.2. Size:384K  international rectifier
irgp35b60pdpbf.pdf pdf_icon

IRGP30B60KD-E

SMPS IGBT PD - 95329IRGP35B60PDPbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VVCE(on) typ. = 1.85VApplications@ VGE = 15V IC = 22A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters Lead-FreeRCE(on) typ. = 84mEFeaturesID (FET

Otros transistores... IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , MBQ50T65FESC , IRGP35B60PD , IRGP35B60PD-EP , IRGP4050 , IRGP4062D , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D .

History: FGA25N120ANTD | DGC60F65M | SGB15N60HS | FGA90N33ATD | GT50N324 | IRGP4066D-E | IRGB4060D

 

 
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