RJH1CD5DPQ-A0 Todos los transistores

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RJH1CD5DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH1CD5DPQ-A0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 2.2V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 30A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 100

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247A

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RJH1CD5DPQ-A0 Datasheet (PDF)

1.1. r07ds0517ej rjh1cd5dpq.pdf Size:53K _renesas

RJH1CD5DPQ-A0
RJH1CD5DPQ-A0

Preliminary Datasheet RJH1CD5DPQ-E0 R07DS0517EJ0300 1200 V - 20 A - IGBT Rev.3.00 Application: Inverter Nov 21, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (trr = 100 ns typ.) in one package ? Trench gate and thin wafer technology

1.2. r07ds0451ej rjh1cd5dpq.pdf Size:53K _renesas

RJH1CD5DPQ-A0
RJH1CD5DPQ-A0

Preliminary Datasheet RJH1CD5DPQ-A0 R07DS0451EJ0100 1200 V - 15 A - IGBT Rev.1.00 Application: Inverter Jul 22, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (trr = 100 ns typ.) in one package ? Trench gate and thin wafer technology

1.3. rjh1cd5dpq-e0.pdf Size:98K _igbt

RJH1CD5DPQ-A0
RJH1CD5DPQ-A0

 Preliminary Datasheet RJH1CD5DPQ-E0 R07DS0517EJ0500 1200V - 20A - IGBT Rev.5.00 Application: Inverter Jun 12, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 180 ns typ.) in one package  Trench gate and thin wa

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