RJH1CD5DPQ-A0 PDF and Equivalents Search

 

RJH1CD5DPQ-A0 Specs and Replacement

Type Designator: RJH1CD5DPQ-A0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 40 pF

Package: TO247A

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RJH1CD5DPQ-A0 datasheet

 ..1. Size:53K  1
 rjh1cd5dpq-a0.pdf pdf_icon

RJH1CD5DPQ-A0

Preliminary Datasheet RJH1CD5DPQ-A0 R07DS0451EJ0100 1200 V - 15 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

 3.1. Size:98K  renesas
 rjh1cd5dpq-e0.pdf pdf_icon

RJH1CD5DPQ-A0

Preliminary Datasheet RJH1CD5DPQ-E0 R07DS0517EJ0500 1200V - 20A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa... See More ⇒

 4.1. Size:53K  renesas
 r07ds0517ej rjh1cd5dpq.pdf pdf_icon

RJH1CD5DPQ-A0

Preliminary Datasheet RJH1CD5DPQ-E0 R07DS0517EJ0300 1200 V - 20 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

 4.2. Size:53K  renesas
 r07ds0451ej rjh1cd5dpq.pdf pdf_icon

RJH1CD5DPQ-A0

Preliminary Datasheet RJH1CD5DPQ-A0 R07DS0451EJ0100 1200 V - 15 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

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Specs: IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJP30H1DPD , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 , RJH1CD7DPQ-A0 , RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 .

Keywords - RJH1CD5DPQ-A0 transistor spec

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