GT5G103 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT5G103 datasheet

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GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) High Input Impedance Low Saturation Voltage VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40

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GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit mm 3rd Generation High input impedance Low saturation voltage V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-emitte

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GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit mm Unit mm Enhancement-mode Low gate drive voltage VGE = 2.5 V (min) (@IC = 130 A) Peak collector current IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emi

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