GT5G103 Spec and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

GT5G103 specs

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GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) High Input Impedance Low Saturation Voltage VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40... See More ⇒

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GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit mm 3rd Generation High input impedance Low saturation voltage V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-emitte... See More ⇒

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GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit mm Unit mm Enhancement-mode Low gate drive voltage VGE = 2.5 V (min) (@IC = 130 A) Peak collector current IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emi... See More ⇒

Specs: GT50L101 , GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , IRGP4086 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 .