RJH1CD6DPQ-E0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJH1CD6DPQ-E0 Datasheet (PDF)

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Preliminary Datasheet RJH1CD6DPQ-E0 R07DS0518EJ05001200V - 25A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa

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Preliminary DatasheetRJH1CD6DPQ-A0 R07DS0452EJ01001200 V - 20 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

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Preliminary DatasheetRJH1CD6DPQ-E0 R07DS0518EJ03001200 V - 25 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

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