RJH1CD7DPQ-A0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH1CD7DPQ-A0  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 328.9 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 70 pF

Encapsulados: TO247A

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RJH1CD7DPQ-A0 datasheet

 ..1. Size:50K  renesas
 rjh1cd7dpq-a0.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 3.1. Size:98K  renesas
 rjh1cd7dpq-e0.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0500 1200V - 30A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

 4.1. Size:53K  renesas
 r07ds0453ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 4.2. Size:53K  renesas
 r07ds0519ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

MOSTRAR MÁS

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