RJH1CD7DPQ-A0 Todos los transistores

 

RJH1CD7DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJH1CD7DPQ-A0
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 328.9 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Paquete / Cubierta: TO247A
 

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RJH1CD7DPQ-A0 Datasheet (PDF)

 ..1. Size:50K  renesas
 rjh1cd7dpq-a0.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary DatasheetRJH1CD7DPQ-A0 R07DS0453EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 3.1. Size:98K  renesas
 rjh1cd7dpq-e0.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ05001200V - 30A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

 4.1. Size:53K  renesas
 r07ds0453ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary DatasheetRJH1CD7DPQ-A0 R07DS0453EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 4.2. Size:53K  renesas
 r07ds0519ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary DatasheetRJH1CD7DPQ-E0 R07DS0519EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

MOSTRAR MÁS

Otros transistores... IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 , RJP63F3DPP-M0 , RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 .

 

 
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