RJH1CD7DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJH1CD7DPQ-A0 Datasheet (PDF)

..1. Size:50K renesas
rjh1cd7dpq-a0.pdf pdf_icon

Preliminary DatasheetRJH1CD7DPQ-A0 R07DS0453EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

3.1. Size:98K renesas
rjh1cd7dpq-e0.pdf pdf_icon

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ05001200V - 30A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

4.1. Size:53K renesas
r07ds0453ej rjh1cd7dpq.pdf pdf_icon

4.2. Size:53K renesas
r07ds0519ej rjh1cd7dpq.pdf pdf_icon

Preliminary DatasheetRJH1CD7DPQ-E0 R07DS0519EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Otros transistores... IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 , FGH60N60SFD , RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 .