RJH1CD7DPQ-A0 PDF and Equivalents Search

 

RJH1CD7DPQ-A0 Specs and Replacement

Type Designator: RJH1CD7DPQ-A0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 328.9 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247A

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RJH1CD7DPQ-A0 datasheet

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 rjh1cd7dpq-a0.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

 3.1. Size:98K  renesas
 rjh1cd7dpq-e0.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0500 1200V - 30A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa... See More ⇒

 4.1. Size:53K  renesas
 r07ds0453ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

 4.2. Size:53K  renesas
 r07ds0519ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-A0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

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Specs: IRGSL30B60K, IRGSL4062D, IRGSL4B60KD1, IRGSL6B60KD, RJH1CD5DPQ-A0, RJH1CD5DPQ-E0, RJH1CD6DPQ-A0, RJH1CD6DPQ-E0, GT30F126, RJH1CD7DPQ-E0, RJH1CM5DPQ-E0, RJH1CM6DPQ-E0, RJH1CM7DPQ-E0, RJH1CV5DPQ-E0, RJH1CV6DPQ-E0, RJH1CV7DPQ-E0, RJH30H1DPP-M0

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