RJH1CM5DPQ-E0 Todos los transistores

 ..1. Size:117K  renesas
 rjh1cm5dpq-e0.pdf

Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ0500 1200V - 15A - IGBT Rev.5.00 Application Inverter Dec 14, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin w

 4.1. Size:53K  renesas
 r07ds0520ej rjh1cm5dpq.pdf

Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ0200 1200V - 15A - IGBT Rev.2.00 Application Inverter Nov 30, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf

 8.1. Size:118K  renesas
 rjh1cm6dpq-e0.pdf

Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ0400 1200V - 20A - IGBT Rev.4.00 Application Inverter Jul 02, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w

 8.2. Size:53K  renesas
 r07ds0522ej rjh1cm7dpq.pdf

Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Aug 11, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w

 8.3. Size:123K  renesas
 rjh1cm7dpq-e0.pdf

Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ0400 1200V - 25A - IGBT Rev.4.00 Application Inverter Jul 02, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin w

 8.4. Size:53K  renesas
 r07ds0521ej rjh1cm6dpq.pdf

Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ0200 1200V - 20A - IGBT Rev.2.00 Application Inverter Nov 30, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf