RJH1CM5DPQ-E0 Datasheet and Replacement

Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ05001200V - 15A - IGBT Rev.5.00Application: Inverter Dec 14, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin w

Preliminary DatasheetRJH1CM5DPQ-E0 R07DS0520EJ02001200V - 15A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf

Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ04001200V - 20A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w

Preliminary DatasheetRJH1CM7DPQ-E0 R07DS0522EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Aug 11, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w

Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ04001200V - 25A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin w

Preliminary DatasheetRJH1CM6DPQ-E0 R07DS0521EJ02001200V - 20A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf