RJH1CM5DPQ-E0 Specs and Replacement
Type Designator: RJH1CM5DPQ-E0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 245 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO247
RJH1CM5DPQ-E0 Substitution - IGBT ⓘ Cross-Reference Search
RJH1CM5DPQ-E0 datasheet
rjh1cm5dpq-e0.pdf
Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ0500 1200V - 15A - IGBT Rev.5.00 Application Inverter Dec 14, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin w... See More ⇒
r07ds0520ej rjh1cm5dpq.pdf
Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ0200 1200V - 15A - IGBT Rev.2.00 Application Inverter Nov 30, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf... See More ⇒
rjh1cm6dpq-e0.pdf
Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ0400 1200V - 20A - IGBT Rev.4.00 Application Inverter Jul 02, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w... See More ⇒
r07ds0522ej rjh1cm7dpq.pdf
Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Aug 11, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w... See More ⇒
Specs: IRGSL4B60KD1, IRGSL6B60KD, RJH1CD5DPQ-A0, RJH1CD5DPQ-E0, RJH1CD6DPQ-A0, RJH1CD6DPQ-E0, RJH1CD7DPQ-A0, RJH1CD7DPQ-E0, RJP63F3DPP-M0, RJH1CM6DPQ-E0, RJH1CM7DPQ-E0, RJH1CV5DPQ-E0, RJH1CV6DPQ-E0, RJH1CV7DPQ-E0, RJH30H1DPP-M0, RJH30H2DPK-M0, RJH6086BDPK
Keywords - RJH1CM5DPQ-E0 transistor spec
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History: STGD10NC60H
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