RJH1CM6DPQ-E0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJH1CM6DPQ-E0 Datasheet (PDF)

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Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ04001200V - 20A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w

4.1. Size:53K renesas
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Preliminary DatasheetRJH1CM6DPQ-E0 R07DS0521EJ02001200V - 20A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf

8.1. Size:53K renesas
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Preliminary DatasheetRJH1CM7DPQ-E0 R07DS0522EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Aug 11, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w

8.2. Size:123K renesas
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Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ04001200V - 25A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin w