RJH1CM6DPQ-E0 Datasheet. Specs and Replacement

Type Designator: RJH1CM6DPQ-E0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 297.6 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 21 nS

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO247

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RJH1CM6DPQ-E0 datasheet

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 rjh1cm6dpq-e0.pdf pdf_icon

RJH1CM6DPQ-E0

Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ0400 1200V - 20A - IGBT Rev.4.00 Application Inverter Jul 02, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w... See More ⇒

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RJH1CM6DPQ-E0

Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ0200 1200V - 20A - IGBT Rev.2.00 Application Inverter Nov 30, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf... See More ⇒

 8.1. Size:53K  renesas
 r07ds0522ej rjh1cm7dpq.pdf pdf_icon

RJH1CM6DPQ-E0

Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Aug 11, 2011 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w... See More ⇒

 8.2. Size:123K  renesas
 rjh1cm7dpq-e0.pdf pdf_icon

RJH1CM6DPQ-E0

Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ0400 1200V - 25A - IGBT Rev.4.00 Application Inverter Jul 02, 2012 Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin w... See More ⇒

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Specs: IRGSL6B60KD, RJH1CD5DPQ-A0, RJH1CD5DPQ-E0, RJH1CD6DPQ-A0, RJH1CD6DPQ-E0, RJH1CD7DPQ-A0, RJH1CD7DPQ-E0, RJH1CM5DPQ-E0, JT075N065WED, RJH1CM7DPQ-E0, RJH1CV5DPQ-E0, RJH1CV6DPQ-E0, RJH1CV7DPQ-E0, RJH30H1DPP-M0, RJH30H2DPK-M0, RJH6086BDPK, RJH6087BDPK

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