RJH1CM6DPQ-E0 IGBT. Datasheet pdf. Equivalent
Type Designator: RJH1CM6DPQ-E0
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 297.6 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Qgⓘ - Total Gate Charge, typ: 100 nC
Package: TO247
RJH1CM6DPQ-E0 Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJH1CM6DPQ-E0 Datasheet (PDF)
rjh1cm6dpq-e0.pdf
Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ04001200V - 20A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w
r07ds0521ej rjh1cm6dpq.pdf
Preliminary DatasheetRJH1CM6DPQ-E0 R07DS0521EJ02001200V - 20A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf
r07ds0522ej rjh1cm7dpq.pdf
Preliminary DatasheetRJH1CM7DPQ-E0 R07DS0522EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Aug 11, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w
rjh1cm7dpq-e0.pdf
Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ04001200V - 25A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin w
r07ds0520ej rjh1cm5dpq.pdf
Preliminary DatasheetRJH1CM5DPQ-E0 R07DS0520EJ02001200V - 15A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf
rjh1cm5dpq-e0.pdf
Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ05001200V - 15A - IGBT Rev.5.00Application: Inverter Dec 14, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin w
Datasheet: IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 , RJH1CD7DPQ-A0 , RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , FGH60N60SFD , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK .
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