RJH6087BDPK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH6087BDPK  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 223.2 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.65 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO3P

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RJH6087BDPK datasheet

 ..1. Size:104K  renesas
 rjh6087bdpk.pdf pdf_icon

RJH6087BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gat

 4.1. Size:106K  renesas
 r07ds0389ej rjh6087bdp.pdf pdf_icon

RJH6087BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gat

 8.1. Size:107K  renesas
 r07ds0390ej rjh6088bdp.pdf pdf_icon

RJH6087BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gat

 8.2. Size:91K  renesas
 rjh6086bdpk.pdf pdf_icon

RJH6087BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. G

MOSTRAR MÁS

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