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RJH60D7DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60D7DPM

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.6V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 90A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO3P

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RJH60D7DPM Datasheet (PDF)

1.1. r07ds0176ej rjh60d7dpm.pdf Size:84K _renesas

RJH60D7DPM
RJH60D7DPM

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.2. r07ds0165ej rjh60d7dpk.pdf Size:83K _renesas

RJH60D7DPM
RJH60D7DPM

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.3. rjh60d7dpm.pdf Size:110K _igbt

RJH60D7DPM
RJH60D7DPM

 Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400 600V - 50A - IGBT Rev.4.00 Application: Inverter Dec 07, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

1.4. rjh60d7dpq-e0.pdf Size:104K _igbt

RJH60D7DPM
RJH60D7DPM

 Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100 600V - 50A - IGBT Rev.1.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

1.5. rjh60d7dpk.pdf Size:98K _igbt

RJH60D7DPM
RJH60D7DPM

 Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400 600V - 50A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

Otros transistores... RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , IRG4PC40U , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 .

 


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