RJH60D7DPM Datasheet. Specs and Replacement

Type Designator: RJH60D7DPM  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 55 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 46 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO3PFM SC93

  📄📄 Copy 

 RJH60D7DPM Substitution

- IGBTⓘ Cross-Reference Search

 

RJH60D7DPM datasheet

 ..1. Size:84K  renesas
 r07ds0176ej rjh60d7dpm.pdf pdf_icon

RJH60D7DPM

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 ..2. Size:110K  renesas
 rjh60d7dpm.pdf pdf_icon

RJH60D7DPM

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400 600V - 50A - IGBT Rev.4.00 Application Inverter Dec 07, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

 5.1. Size:83K  renesas
 r07ds0165ej rjh60d7dpk.pdf pdf_icon

RJH60D7DPM

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 5.2. Size:98K  renesas
 rjh60d7dpk.pdf pdf_icon

RJH60D7DPM

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400 600V - 50A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

SHOW MORE

Specs: RJH6087BDPK, RJH6088BDPK, RJH60D0DPM, RJH60D0DPQ-A0, RJH60D5DPM, RJH60D5DPQ-A0, RJH60D6DPM, RJH60D7ADPK, IRGP4086, RJH60F0DPQ-A0, RJH60F3DPK, RJH60F3DPQ-A0, RJH60F4DPQ-A0, RJH60F5DPQ-A0, RJH60F6DPQ-A0, RJH60F7DPQ-A0, RJH60M0DPQ-A0

Keywords - RJH60D7DPM transistor spec

 RJH60D7DPM cross reference
 RJH60D7DPM equivalent finder
 RJH60D7DPM lookup
 RJH60D7DPM substitution
 RJH60D7DPM replacement